Cree to Invest 美金1 Billion to Expand Silicon Carbide Capacity
Advanced manufacturing campus will accelerate industry transition from silicon to silicon carbide to meet EV and 5G market demand
Expansion to generate up to a 30-fold increase in SiC wafer fabrication capacity and 30-fold increase in SiC materials production to meet the expected market growth by 2024
Five-year investment leverages an existing building (“North Fab”) and refurbished 200mm equipment to build state-of-the-art automotive-qualified production facility
Investment: 美金450M for North Fab; 美金450M for materials mega factory; and 美金100M in other investments associated with growing the business
投資：4.5億美元用在North Fab;4.5億美元用在材料超等工場(mega factory);1億美元用在陪伴著營業增加所需要的其它投入
▲ Cree North Fab
DURHAM, N.C., May 7, 2019 – As part of its long-term growth strategy, Cree, Inc. (Nasdaq: CREE) announces it will invest up to 美金1 billion in the expansion of its silicon carbide capacity with the development of a state-of-the-art, automated 200mm silicon carbide fabrication facility and a materials mega factory at its U.S. campus headquarters in Durham, N.C. It marks the company’s largest investment to date in fueling its Wolfspeed silicon carbide and GaN on silicon carbide business. Upon completion in 2024, the facilities will substantially increase the company’s silicon carbide materials capability and wafer fabrication capacity, allowing wide bandgap semiconductor solutions that enable the dramatic technology shifts underway within the automotive, communications infrastructure and industrial markets.
2019年5月7日，美國北卡羅萊納州達勒姆訊 – Cree, Inc. (Nasdaq: CREE) 公布，作為公司持久增加計謀的一部門，將投資10億美元用在擴年夜SiC碳化硅產能，在公司美國總部北卡羅萊納州達勒姆市建造一座采取最早進手藝的主動化200mm SiC碳化硅出產工場和一座材料超等工場。這項標記著公司迄今為止最年夜的投資，將為Wolfspeed SiC碳化硅和GaN-on-SiC碳化硅基氮化鎵營業供給動能。在2024年全數落成以后，這些工場將極年夜加強公司SiC碳化硅材料機能和晶圓制造產能，使得寬禁帶半導體材料解決方案為汽車、通信舉措措施和工業市場帶來龐大手藝改變。
“We continue to see great interest from the automotive and communications infrastructure sectors to leverage the benefits of silicon carbide to drive innovation. However, the demand for silicon carbide has long surpassed the available supply. Today, we are announcing our largest-ever investment in production to dramatically increase this supply and help customers deliver transformative products and services to the marketplace,” said Gregg Lowe, CEO of Cree. “This investment in equipment, infrastructure and our workforce is capable of increasing our silicon carbide wafer fabrication capacity up to 30-fold and our materials production by up to 30-fold compared to Q1 of fiscal year 2017, which is when we began the first phase of capacity expansion. We believe this will allow us to meet the expected growth in Wolfspeed silicon carbide material and device demand over the next five years and beyond.”
Cree首席履行官Gregg Lowe師長教師暗示：“我們不竭地看到在汽車和通信舉措措施范疇采取SiC碳化硅的優勢來驅動立異所發生的龐大效益。可是，現有的供給卻遠遠不克不及夠知足我們對SiC碳化硅的需求。今天，我們公布了公司迄今在出產制造的最年夜投資，將年夜幅地晉升供給，幫忙客戶為市場供給變化性的產物和辦事。這項在裝備、根本舉措措施、公司人力方面的龐大投入，將為我們顯著擴年夜產能。與2017財年第一季度(也就是我們最先擴年夜產能的第一階段)比擬較，可以或許帶來SiC碳化硅晶圓制造產能的30倍增加和材料出產的30倍增加。我們相信這將使得我們可以或許知足Wolfspeed SiC碳化硅材料和器件在將來5年甚至更久遠的預期增加。”
The plan delivers additional capacity for its industry-leading Wolfspeed silicon carbide business with the build out of an existing structure as a 253,000 square-foot, 200mm power and RF wafer fabrication facility as an initial step to serve the projected market demand. The new North Fab is designed to be fully automotive qualified and will provide nearly 18 times more surface area for manufacturing than exists today, initially opening with the production of 150mm wafers. The company will convert its existing Durham fabrication and materials facility into a materials mega factory.
這項打算將為業界領先的Wolfspeed SiC碳化硅營業供給附加產能。經由過程增建現有的建筑舉措措施，作為面積253,000平方英尺的200mm功率和RF射頻晶圓制造工場，邁出知足預期市場需求的第一步。新的North Fab將被設計成可以或許周全知足汽車認證的工場，其出產供給的晶圓概況積將會是今天現有的18倍，剛最先階段將進行150mm晶圓的出產。公司將把現有在達勒姆的出產和材料工場改變為一座材料超等工場。
“These silicon carbide manufacturing mega-hubs will accelerate the innovation of today’s fastest growing markets by producing solutions that help extend the range and reduce the charge times for electric vehicles, as well as support the rollout of 5G networks around the world,” said Lowe. “We believe that this represents the largest capital investment in the history of silicon carbide and GaN technologies and production with a fiscally responsible approach. By using existing facilities and installing a majority of refurbished tools, we believe we will be able to deliver a state-of-the-art 200mm capable fab at approximately one-third of the cost of a new fab.”
Cree首席履行官Gregg Lowe師長教師同時還暗示：“這些SiC碳化硅制造超等工場，將加快現今最快增加市場的立異。經由過程供給解決方案，幫忙提高EV電動汽車的行駛里程并削減充電時候，同時撐持5G收集在全球的擺設。我們相信這代表著SiC碳化硅和GaN氮化鎵手藝和制造有史以來最年夜的本錢投資，也是一種在財務上負責任的體例。經由過程采取現有工場和安裝絕年夜部門的整新東西，我們相信我們可以實現供給最早進手藝的200mm fab，而且本錢年夜約僅為一座新fab的1/3。”
The expanded campus also creates high-tech job opportunities and will serve as an advanced manufacturing workforce development initiative. Cree plans to partner with state and local community and four-year colleges to develop training programs to prepare its workforce for the long-term, high-quality employment and growth opportunities the new facilities will present.
About Cree, Inc.
Cree is an innovator of Wolfspeed power and radio frequency (RF) semiconductors, lighting class LEDs and lighting products. Cree’s Wolfspeed product families include silicon carbide materials, power-switching devices and RF devices targeted for applications such as electric vehicles, fast charging, inverters, power supplies, telecom and military and aerospace. Cree’s LED product families include blue and green LED chips, high-brightness LEDs and lighting-class power LEDs targeted for indoor and outdoor lighting, video displays, transportation and specialty lighting applications. Cree’s LED lighting systems and lamps serve indoor and outdoor applications. For additional product and Company information, please refer to www.cree.com.